INFLUENCE OF DEGREE OF IONIC DOPING ON P-TYPE AND N-TYPE REGIONS ON CURRENT-VOLTAGE AND MODULATION CHARACTERISTICS OF A SILICON P-I-N DIODE

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作者：

GUSEV, VM

KURINNYI, VI

KRUGLOV, II

RYZHIKOV, IV

SESTRORE.BV

SINKOV, YA

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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1969年 / 3卷 / 06期

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O469 [凝聚态物理学];

学科分类号：

070205 ;

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页码：759 / &

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