HIGH-SPEED GA0.47IN0.53AS/INP INFRARED SCHOTTKY-BARRIER PHOTODIODES

被引:0
作者
KIM, JH
LI, SS
FIGUEROA, L
CARRUTHERS, TF
WAGNER, RS
机构
[1] UNIV FLORIDA,GAINESVILLE,FL 32611
[2] USN,RES LAB,WASHINGTON,DC 20375
[3] UNIV CALIF LOS ALAMOS NATL LAB,LOS ALAMOS,NM 87545
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
6
引用
收藏
页码:1067 / 1068
页数:2
相关论文
共 6 条
[1]   HIGH-SPEED GALNAS SCHOTTKY PHOTODETECTOR [J].
EMEIS, N ;
SCHUMACHER, H ;
BENEKING, H .
ELECTRONICS LETTERS, 1985, 21 (05) :180-181
[2]  
Kim J. H., 1986, P SOC PHOTO-OPT INS, V0716, P96
[3]   BARRIER HEIGHT ENHANCEMENT OF INP-BASED N-GA0.47IN0.53AS SCHOTTKY-BARRIER DIODES GROWN BY MOLECULAR-BEAM EPITAXY [J].
KIM, JH ;
LI, SS ;
FIGUEROA, L .
ELECTRONICS LETTERS, 1988, 24 (11) :687-689
[4]  
KIM JH, 1986, ELECTRON PHOTON, V22, P214
[5]  
LI K, 1984, ELECTRON LETT, V20, P195
[6]  
WANG SY, 1983, P SOC PHOTO-OPT INST, V439, P178, DOI 10.1117/12.966093