RADIATION EFFECTS IN METAL-INSULATOR-SEMICONDUCTOR CAPACITORS AS DETERMINED FROM CONDUCTANCE MEASUREMENTS

被引：9

作者：

PERKINS, CW

机构：

[1] Hughes Aircraft Company, Ground Systems Group, Fullerton

来源：

APPLIED PHYSICS LETTERS | 1968年 / 12卷 / 04期

关键词：

D O I：

10.1063/1.1651933

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Conductance-versus-voltage measurements were employed to determine the distribution of fast interface states in MOS and MNS capacitors and the changes in these distributions due to gamma irradiation with applied bias. MNS samples showed no changes due to irradiation, while MOS samples showed an increase in the conductance peak due to an increase in the density of the fast states. © 1968 The American Institute of Physics.

引用

页码：153 / +

页数：1

共 7 条

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SZEDON, JR
SANDOR, JE
[J]. APPLIED PHYSICS LETTERS, 1965, 6 (09) : 181 - &
[7] ELECTRON BOMBARDMENT OF MOS CAPACITORS - (0.1 TO 1.0 MEV - SI-SIO2 - INDUCED POSITIVE CHARGE - E)
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