THE EXTRACTION OF 2-DIMENSIONAL MOS-TRANSISTOR DOPING VIA INVERSE MODELING

被引：20

作者：

KHALIL, N ^{[1
]}

FARICELLI, J ^{[1
]}

BELL, D ^{[1
]}

SELBERHERR, S ^{[1
]}

机构：

[1] VIENNA TECH UNIV,VIENNA,AUSTRIA

来源：

IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 01期

关键词：

D O I：

10.1109/55.363213

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a novel method for the determination of the two-dimensional (2D) doping profile of a MOSFET using inverse modeling. In our method, the logarithms of the donors and accepters concentrations are each represented by a tenser product spline (TPS). The TPS coefficients are extracted by nonlinear, least squares optimization from source/drain (S/D) diode and gate capacitance data. After validating the method by applying it to simulated capacitance data, we present the results of using the new technique to extract the 2D profile of a 0.42 mu m gate length CMOS technology N-channel device.

引用

页码：17 / 19

页数：3

共 12 条

[1]

de Boor C., 1978, PRACTICAL GUIDE SPLI

[2]

GOODWINJOHANSSO.SH, 1989, IEEE T COMPUTER AIDE, V8

[3] INVESTIGATION OF THE PHYSICAL MODELING OF THE GATE-DEPLETION EFFECT [J].

HABAS, P ;

FARICELLI, JV .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (06) :1496-1500

[4]

HORI T, 1989 IEDM, P777

[5] INFLUENCE OF DEBYE LENGTH ON C-V MEASUREMENTS OF DOPING PROFILES [J].

JOHNSON, WC ;

PANOUSIS, PT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) :965-&

[6]

KHALIL N, 1994 S VLSI TECHN, P131

[7]

KHALIL N, 1993, SISDEP 93, P365

[8]

Kordic S., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P277, DOI 10.1109/IEDM.1989.74278

[9]

Ouwerling G. L. J., 1989, THESIS DELFT U TECHN

[10]

SELBERHERR S, 1980, IEEE T ELECTRON DEV, V27

← 1 2 →