POLARIZATION-RESOLVED PHOTOLUMINESCENCE OF INAS/GAAS STRAINED-LAYER STRUCTURES ON VARIOUSLY ORIENTED SUBSTRATES

被引:4
作者
SHIMA, T
LEE, JS
KUDO, K
TANAKA, K
NIKI, S
YAMADA, A
MAKITA, Y
机构
[1] CHIBA UNIV,DEPT ELECT & ELECTR ENGN,INAGE KU,CHIBA 263,JAPAN
[2] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN
关键词
D O I
10.1016/0169-4332(94)90154-6
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Polarization-resolved photoluminescence (PPL) measurements were performed to investigate the origin of the PL peaks of InAs/GaAs quantum well structures grown on variously oriented GaAs substrates. PL peaks around 1.37 eV show strong dependence on polarization. The results demonstrate that the PL polarization is mainly due to the quantum structures in tetrahedral three-dimensional microstructures formed on the sample surface.
引用
收藏
页码:164 / 168
页数:5
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