PHOTOELECTROMAGNETIC EFFECT IN INDIUM ARSENIDE

被引：27
|
作者：
DIXON, JR
机构：
来源：
PHYSICAL REVIEW | 1957年 / 107卷 / 02期
关键词：
D O I：
10.1103/PhysRev.107.374
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：374 / 378
页数：5
相关论文
共 50 条
  • [41] HOT PHOTOELECTRONS IN INDIUM ARSENIDE
    TAMASHYAVICHYUS, AV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (12): : 1336 - 1338
  • [42] CARRIER RECOMBINATION IN INDIUM ARSENIDE
    HOLLIS, JEL
    PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1967, 91 (571P): : 151 - &
  • [43] TEXTURED INDIUM ARSENIDE FILMS
    JOHNSON, JE
    JOURNAL OF APPLIED PHYSICS, 1966, 37 (05) : 2188 - &
  • [44] Nonlinear absorption in indium arsenide
    Berryman, KW
    Rella, CW
    PHYSICAL REVIEW B, 1997, 55 (11) : 7148 - 7154
  • [45] DIFFUSION OF MERCURY IN INDIUM ARSENIDE
    SHARMA, BL
    PUROHIT, RK
    MUKERJEE, SN
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (06) : 1397 - +
  • [46] DIFFUSION OF GOLD IN INDIUM ARSENIDE
    REMBEZA, SI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (04): : 516 - &
  • [47] Cobalt contacts on indium arsenide
    Schmidt, G
    Müller, G
    Molenkamp, LW
    Behet, M
    De Boeck, J
    Panissod, P
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1999, 198-99 : 134 - 136
  • [48] ON THE BEHAVIOR OF IODINE IN INDIUM ARSENIDE
    HITOVA, L
    TRIFONOVA, EP
    SIDOROV, AF
    CRYSTAL RESEARCH AND TECHNOLOGY, 1991, 26 (05) : 605 - 609
  • [49] RECOMBINATION IN INTRINSIC INDIUM ARSENIDE
    IGLITSYN, MI
    SOLOVEVA, EV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (07): : 882 - &
  • [50] Spin injection in indium arsenide
    Johnson, Mark
    Koo, Hyun Cheol
    Hang, Suk Hee
    Chang, Joonyeon
    FRONTIERS IN PHYSICS, 2015, 3
12345