INVESTIGATION OF QUANTUM-WELLS BY THE METHOD OF CAPACITANCE-VOLTAGE CHARACTERISTICS

被引：0
|
作者：
ALESHKIN, VY
DEMIDOV, EV
ZVONKOV, BN
MUREL, AV
ROMANOV, YA
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1991年 / 25卷 / 06期
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D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A method is suggested for the determination of the parameters of a quantum well in a heterostructure from its capacitance-voltage characteristics. It is shown that this method can be used to determine the distance from a quantum well to the semiconductor surface, the surface densities of the majority carriers, the dopant concentration in a quantum well, the depth of the two-dimensional subband, as well as to obtain estimates about the density-of-states "tails" in the quantum well. The results are given of an experimental investigation of GaAs-InxGa1-xAs-GaAs structures.
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页码：631 / 634
页数：4
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