INVESTIGATION OF QUANTUM-WELLS BY THE METHOD OF CAPACITANCE-VOLTAGE CHARACTERISTICS

A method is suggested for the determination of the parameters of a quantum well in a heterostructure from its capacitance-voltage characteristics. It is shown that this method can be used to determine the distance from a quantum well to the semiconductor surface, the surface densities of the majority carriers, the dopant concentration in a quantum well, the depth of the two-dimensional subband, as well as to obtain estimates about the density-of-states "tails" in the quantum well. The results are given of an experimental investigation of GaAs-InxGa1-xAs-GaAs structures.