1ST MICROWAVE CHARACTERIZATION OF LP-MOCVD GROWN GALNP/GAAS SELF-ALIGNED HBT

被引：52
作者：
DELAGE, SL
DIFORTEPOISSON, MA
BLANCK, H
BRYLINSKI, C
CHARTIER, E
COLLOT, P
机构：
[1] Thomson-CSF/LCR, 91404 Orsay Cédex, Domaine de Corbeville
来源：
ELECTRONICS LETTERS | 1991年 / 27卷 / 03期
关键词：
SEMICONDUCTOR DEVICES AND MATERIALS; BIPOLAR DEVICES; TRANSISTORS; MICROWAVE DEVICES;
D O I：
10.1049/el:19910163
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The microwave characterisation of GaInP/GaAs HBTs is reported. The structures are grown by LP-MOCVD, and carbon base doping is used. The transistor design is basically multimesas and the devices are obtained using a combination of dry and wet etching. The current and power gain cutoff frequencies of these devices are, respectively, 30GHz and 45 GHz.
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页码：253 / 254
页数：2
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