1ST MICROWAVE CHARACTERIZATION OF LP-MOCVD GROWN GALNP/GAAS SELF-ALIGNED HBT

被引：52

作者：

DELAGE, SL

DIFORTEPOISSON, MA

BLANCK, H

BRYLINSKI, C

CHARTIER, E

COLLOT, P

机构：

[1] Thomson-CSF/LCR, 91404 Orsay Cédex, Domaine de Corbeville

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 03期

关键词：

SEMICONDUCTOR DEVICES AND MATERIALS; BIPOLAR DEVICES; TRANSISTORS; MICROWAVE DEVICES;

D O I：

10.1049/el:19910163

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The microwave characterisation of GaInP/GaAs HBTs is reported. The structures are grown by LP-MOCVD, and carbon base doping is used. The transistor design is basically multimesas and the devices are obtained using a combination of dry and wet etching. The current and power gain cutoff frequencies of these devices are, respectively, 30GHz and 45 GHz.

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页码：253 / 254

页数：2

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共 8 条

[1] HEAVILY DOPED BASE GAINP/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY CHEMICAL BEAM EPITAXY [J].

ALEXANDRE, F ;

BENCHIMOL, JL ;

DANGLA, J ;

DUBONCHEVALLIER, C ;

AMARGER, V .

ELECTRONICS LETTERS, 1990, 26 (21) :1753-1755

[2] CARBON-DOPED BASE ALGAAS GAAS HBTS GROWN BY MOCVD USING TMAS [J].

ITO, H ;

KOBAYASHI, T ;

ISHIBASHI, T .

ELECTRONICS LETTERS, 1989, 25 (19) :1302-1303

[3] BAND LINEUP FOR A GAINP/GAAS HETEROJUNCTION MEASURED BY A HIGH-GAIN NPN HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

KOBAYASHI, T ;

TAIRA, K ;

NAKAMURA, F ;

KAWAI, H .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (12) :4898-4902

[4] HETEROSTRUCTURE BIPOLAR-TRANSISTORS - WHAT SHOULD WE BUILD [J].

KROEMER, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :126-130

[5] CONTROLLED CARBON DOPING OF GAAS BY METALORGANIC VAPOR-PHASE EPITAXY [J].

KUECH, TF ;

TISCHLER, MA ;

WANG, PJ ;

SCILLA, G ;

POTEMSKI, R ;

CARDONE, F .

APPLIED PHYSICS LETTERS, 1988, 53 (14) :1317-1319

[6] HETEROJUNCTION BIPOLAR-TRANSISTOR USING A (GA,IN)P EMITTER ON A GAAS BASE, GROWN BY MOLECULAR-BEAM EPITAXY [J].

MONDRY, MJ ;

KROEMER, H .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (04) :175-177

[7] HIGH-PERFORMANCE GAAS GAINP HETEROSTRUCTURE BIPOLAR-TRANSISTORS GROWN BY LOW-PRESSURE METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J].

RAZEGHI, M ;

OMNES, F ;

DEFOUR, M ;

MAUREL, P ;

HU, J ;

WOLK, E ;

PAVLIDIS, D .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (03) :278-280

[8] MBE-GROWN (GAIN)P/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS EXHIBITING CURRENT GAINS UP TO 200 [J].

ROCKETT, PI ;

PATE, MA ;

CLAXTON, PA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (03) :810-811