THEORETICAL-STUDY OF DIFFERENTIAL GAIN IN STRAINED QUANTUM-WELL STRUCTURES

被引：72

作者：

SUEMUNE, I

机构：

[1] Faculty of Engineering, Hiroshima University

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1991年 / 27卷 / 05期

关键词：

D O I：

10.1109/3.83371

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Differential gain in semiconductor lasers is closely related to high-frequency capability, and the modulation band-width is expanded with enhancement of the differential gain. In this paper, the differential gain expected in a strained quantum well (QW) and in a lattice-matched QW is discussed based on a theoretical treatment of the band structures where the band nonparabolicity is taken into account. The differential gain in strained QW's will be larger by about three-four times relative to lattice-matched QW's, and a maximum differential gain of 4-6 x 10(-15) cm2 will be possible in strained QW's. The anisotropy of the subband nonparabolicity in lattice-matched QW's contributes to the larger difference between the two types of QW's. The calculated band-edge effective masses and the calculated laser properties are compared to the available measurements, and some comments are given for realizing high-speed strained lasers.

引用

页码：1149 / 1159

页数：11

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