A VAPOR-GROWN VARIABLE CAPACITANCE DIODE

被引:9
作者
ANDERSON, RL
OROURKE, MJ
机构
关键词
D O I
10.1147/rd.43.0264
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
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页码:264 / 268
页数:5
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[21]   STUDY OF GROWTH DEFECTS IN VAPOR-GROWN CRYSTALS [J].
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