PREDICTION OF FIELD-TIME-DEPENDENT GATE-OXIDE BREAKDOWN IN MOS DEVICES

被引：2
作者：
LI, SP
MESERJIAN, J
机构：
[1] Jet Propulsion Laboratory, California Institute of Technology, Pasadena
来源：
SOLID-STATE ELECTRONICS | 1979年 / 22卷 / 11期
关键词：
D O I：
10.1016/0038-1101(79)90066-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The model for field-time-dependent breakdown in the gate oxide of MOS devices is extended and verified with experimental data. The model permits accelerated tests at high fields which can be used to predict gate-oxide breakdowns at much longer times at normal operating fields. © 1979.
引用
收藏
页码：939 / 942
页数：4
相关论文
共 50 条
[41]   Oxide field enhancement corrected time dependent dielectric breakdown of polyoxides [J].
Gueorguiev, VK ;
Ivanov, TE ;
Dimitriadis, CA ;
Andreev, SK ;
Popova, LI .
MICROELECTRONICS JOURNAL, 2000, 31 (08) :663-666
[42]   NUMERICAL-SIMULATION OF GATE OXIDE THINNING IN MOS DEVICES [J].
WILSON, LO .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (04) :831-837
[43]   Unified model for QBD prediction for thin gate oxide MOS devices with constant voltage and current stress [J].
Quddus, MT ;
DeMassa, TA ;
Sanchez, JJ .
MICROELECTRONIC ENGINEERING, 2000, 51-2 :357-372
[44]   FIELD ACCELERATION FACTOR FOR DIELECTRIC-BREAKDOWN OF MOS DEVICES [J].
PATRIKAR, RM ;
LAL, R .
MICROELECTRONICS AND RELIABILITY, 1989, 29 (04) :603-607
[45]   From radiation induced leakage current to soft breakdown in irradiated MOS devices with ultra-thin gate oxide [J].
Ceschia, M ;
Paccagnella, A ;
Cester, A ;
Ghidini, G ;
Wyss, J .
STRUCTURE AND ELECTRONIC PROPERTIES OF ULTRATHIN DIELECTRIC FILMS ON SILICON AND RELATED STRUCTURES, 2000, 592 :201-206
[46]   The gate-oxide breakdown effect coupled by channel hot-carrier-effect in SOI MOSFET's [J].
Hao, Y ;
Zhu, JG ;
Ren, HX ;
Zhang, WD .
CHINESE JOURNAL OF ELECTRONICS, 2001, 10 (02) :204-209
[47]   Observation of hot-carrier-induced nFET gate-oxide breakdown in dynamically stressed CMOS circuits [J].
Kaczer, B ;
Crupi, F ;
Degraeve, R ;
Roussel, P ;
Ciofi, C ;
Groeseneken, G .
INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, 2002, :171-174
[48]   Characterization of 0.5μm BiCMOS gate oxide Using Time Dependent Dielectric Breakdown Test [J].
Wahab, Mohd Zahrin A. ;
Jalar, Azman ;
Abdullah, Shahrom ;
Mamat, Hazian .
MANUFACTURING SCIENCE AND ENGINEERING, PTS 1-5, 2010, 97-101 :40-+
[49]   Time-dependent dielectric breakdown of recessed AlGaN/GaN-on-Si MOS-HFETs with PECVD SiO2 gate oxide [J].
Kim, Hyun-Seop ;
Eom, Su-Keun ;
Seo, Kwang-Seok ;
Kim, Hyungtak ;
Cha, Ho-Young .
VACUUM, 2018, 155 :428-433
[50]   New Insights Into Oxide Breakdown Current Partitioning Analysis for MOS Devices [J].
Gerrer, Louis ;
Ghibaudo, Gerard ;
Rafik, Mustapha .
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2012, 12 (01) :180-182
12345