PREDICTION OF FIELD-TIME-DEPENDENT GATE-OXIDE BREAKDOWN IN MOS DEVICES

被引：2
作者：
LI, SP
MESERJIAN, J
机构：
[1] Jet Propulsion Laboratory, California Institute of Technology, Pasadena
来源：
SOLID-STATE ELECTRONICS | 1979年 / 22卷 / 11期
关键词：
D O I：
10.1016/0038-1101(79)90066-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The model for field-time-dependent breakdown in the gate oxide of MOS devices is extended and verified with experimental data. The model permits accelerated tests at high fields which can be used to predict gate-oxide breakdowns at much longer times at normal operating fields. © 1979.
引用
收藏
页码：939 / 942
页数：4
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