RELATIONSHIPS OF ELECTRICAL-PROPERTIES AND MELTING THRESHOLD IN LASER-ANNEALED ION-IMPLANTED SILICON

被引：5

作者：

WANG, KL ^{[1
]}

LIU, YS ^{[1
]}

BURMAN, C ^{[1
]}

机构：

[1] SUNY ALBANY,ALBANY,NY 12222

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 03期

关键词：

D O I：

10.1063/1.91094

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper describes a study comparing the results of the electrical measurements and the regrowth behavior of ion-implanted silicon annealed with an 80-ns (FWHM) laser pulse at 1.06 μm. Certain correlations were established among the threshold energy density required for melting, the dopant distributions, and the diode junction depth and leakage. It is demonstrated that in order to obtain low-leakage diodes, the anneaing energy density, which depends upon the implant conditions, far exceeds the melting energy density as determined from the transient optical-reflectivity change.

引用

页码：263 / 265

页数：3

共 22 条

[1] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J].