RADICAL BEAM ION-BEAM ETCHING OF GAAS

被引：25

作者：

SKIDMORE, JA ^{[1
]}

COLDREN, LA ^{[1
]}

HU, EL ^{[1
]}

MERZ, JL ^{[1
]}

ASAKAWA, K ^{[1
]}

机构：

[1] NEC CORP, MIYAMAE KU, KAWASAKI, KANAGAWA 213, JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 06期

关键词：

D O I：

10.1116/1.584194

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1885 / 1888

页数：4

共 16 条

[1] DAMAGE AND CONTAMINATION-FREE GAAS AND ALGAAS ETCHING USING A NOVEL ULTRAHIGH-VACUUM REACTIVE ION-BEAM ETCHING SYSTEM WITH ETCHED SURFACE MONITORING AND CLEANING METHOD [J].

ASAKAWA, K ;

SUGATA, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :677-680

[2]

ASAKAWA K, UNPUB

[3]

BOSCH MA, 1981, APPL PHYS LETT, V38, P264, DOI 10.1063/1.92338

[4] CCL4 AND CL-2 PLASMA-ETCHING OF III-V-SEMICONDUCTORS AND THE ROLE OF ADDED O-2 [J].

BURTON, RH ;

SMOLINSKY, G .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (07) :1599-1604

[5] ION-BEAM ENHANCED MAGNETRON REACTIVE ION ETCHING [J].

CHINN, JD .

APPLIED PHYSICS LETTERS, 1987, 51 (24) :2007-2009

[6]

CHINN JD, 1983, J VAC SCI TECHNOL A, V1, P1701

[7]

DOUGHTY GF, 1988, J VAC SCI TECHNOL B, V6, P127

[8] MICROWAVE DISCHARGE CAVITIES OPERATING AT 2450 MHZ [J].

FEHSENFELD, FC ;

EVENSON, KM ;

BROIDA, HP .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1965, 36 (03) :294-+

[9] A NOVEL ANISOTROPIC DRY ETCHING TECHNIQUE [J].

GEIS, MW ;

LINCOLN, GA ;

EFREMOW, N ;

PIACENTINI, WJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :1390-1393

[10] HOT JET ETCHING OF GAAS AND SI [J].

GEIS, MW ;

EFREMOW, NN ;

LINCOLN, GA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01) :315-317

← 1 2 →