PLANAR DIFFUSED GALLIUM ARSENIDE MILLIMETER-WAVE VARACTOR DIODES

被引:14
作者
BURRUS, CA
机构
来源
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1967年 / 55卷 / 06期
关键词
D O I
10.1109/PROC.1967.5749
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1104 / &
相关论文
共 10 条
[2]   MILLIMETER-WAVE POINT-CONTACT AND JUNCTION DIODES [J].
BURRUS, CA .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (04) :575-+
[3]  
DELOACH BC, 1964, IEEE T MICROW THEORY, VMT12, P15
[4]   USE OF LOW-TEMPERATURE DEPOSITED SILICON DIOXIDE FILMS AS DIFFUSION MASKS IN GAAS [J].
ING, SW ;
DAVERN, W .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (01) :120-122
[5]   A DIFFUSION MASK FOR GERMANIUM [J].
JORDAN, EL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (05) :478-481
[6]  
KERWIN RE, PRIVATE COMMUNICATIO
[7]  
LEE TD, TO BE PUBLISHED
[8]  
LEE TP, 1965, IEEE T ELECTRON DEV, VED12, P457
[9]   GALLIUM ARSENIDE PLANAR TECHNOLOGY [J].
VONMUNCH, W .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1966, 10 (06) :438-+
[10]   MILLIMETER FREQUENCY CONVERSION USING AU-N-TYPE GAAS SCHOTTKY BARRIER EPITAXIAL DIODES WITH A NOVEL CONTACTING TECHNIQUE [J].
YOUNG, DT ;
IRVIN, JC .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (12) :2130-&