THE IMPACT OF INTRINSIC SERIES RESISTANCE ON MOSFET SCALING

[1] MODELS FOR CONTACTS TO PLANAR DEVICES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 145 - &

[2] GENERALIZED GUIDE FOR MOSFET MINIATURIZATION [J]. ELECTRON DEVICE LETTERS, 1980, 1 (01): : 2 - 4

[3] CAREY PG, 1985 DEV RES C

[4] Chatterjee P. K., 1980, IEEE Electron Device Letters, VEDL-1, P220, DOI 10.1109/EDL.1980.25295

[5] DAVIES DE, 1985 DEV RES C

[6] MOS DEVICE AND TECHNOLOGY CONSTRAINTS IN VLSI [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 567 - 573

[7] EXPERIMENTAL RESULTS ON SUBMICRON-SIZE P-CHANNEL MOSFETS [J]. ELECTRON DEVICE LETTERS, 1982, 3 (02): : 34 - 37

[8] Fichtner W., 1983, International Electron Devices Meeting 1983. Technical Digest, P384

[9] Hillenius S. J., 1985, Proceedings of IEEE International Conference on Computer Design: VLSI in Computers. ICCD '85 (Cat. No.85CH2223-6), P147

[10] Horiguchi S., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P761

[1] MODELS FOR CONTACTS TO PLANAR DEVICES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 145 - &

[2] GENERALIZED GUIDE FOR MOSFET MINIATURIZATION [J]. ELECTRON DEVICE LETTERS, 1980, 1 (01): : 2 - 4

[3] CAREY PG, 1985 DEV RES C

[4] Chatterjee P. K., 1980, IEEE Electron Device Letters, VEDL-1, P220, DOI 10.1109/EDL.1980.25295

[5] DAVIES DE, 1985 DEV RES C

[6] MOS DEVICE AND TECHNOLOGY CONSTRAINTS IN VLSI [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 567 - 573

[7] EXPERIMENTAL RESULTS ON SUBMICRON-SIZE P-CHANNEL MOSFETS [J]. ELECTRON DEVICE LETTERS, 1982, 3 (02): : 34 - 37

[8] Fichtner W., 1983, International Electron Devices Meeting 1983. Technical Digest, P384

[9] Hillenius S. J., 1985, Proceedings of IEEE International Conference on Computer Design: VLSI in Computers. ICCD '85 (Cat. No.85CH2223-6), P147

[10] Horiguchi S., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P761