DOSE-TIME RELATION IN BF3 PLASMA IMMERSION ION-IMPLANTATION

被引：17

作者：

SHAO, JQ ^{[1
]}

ROUND, M ^{[1
]}

QIN, S ^{[1
]}

CHAN, C ^{[1
]}

机构：

[1] NORTHEASTERN UNIV, DEPT ELECT & COMP ENGN, PLASMA SCI & MICROELECTR LAB, BOSTON, MA 02115 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1995年 / 13卷 / 02期

关键词：

Atoms - Computer simulation - Deposition - Doping (additives) - Plasma etching - Silica - Silicon;

D O I：

10.1116/1.579418

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Etching and deposition rates of silicon and SiO2 during BF3 plasma immersion ion implantation are measured. The relation between total dose and plasma immersion ion implantation processing time is developed through computer modeling. The results are in very good agreement with the experimental data. Comparison with a previously published model is also given.

引用

页码：332 / 334

页数：3

共 6 条

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MCGRUER, NE ;

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[5]

RYSSEL H, 1982, ION IMPLANTATION TEC, P177

[6]

ZIEGLER JF, 1992, TRANSPORT IONS MATTE

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