DETECTION OF HYDROGEN-PLASMA-INDUCED DEFECTS IN SI BY POSITRON-ANNIHILATION

被引：34

作者：

ASOKAKUMAR, P ^{[1
]}

STEIN, HJ ^{[1
]}

LYNN, KG ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 13期

关键词：

D O I：

10.1063/1.111831

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a positron annihilation study of defects created in Si by rf hydrogen-plasma exposure at 275-degrees-C. Analysis of positron annihilation spectroscopy data indicates voidlike structures in a defective layer extending to almost-equal-to 14 nm from the surface at a concentration of 1.9-0.5 X 10(20) cm-3. The Doppler broadening parameter for the annihilation gamma rays is strongly correlated to the hydrogen coverage of the void surfaces, voids remain in the Si to at least 800-degrees-C while the hydrogen is desorbed from their surfaces between 600 and 800-degrees-C.

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页码：1684 / 1686

页数：3

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