UNOCCUPIED ELECTRONIC STATES OF GE(001)2X1 BY CONSTANT INITIALBAND PHOTOEMISSION

被引:0
作者
KIPP, L
SELLMER, C
MANZKE, R
SKIBOWSKI, M
机构
[1] Institut für Experimentalphysik, Universität Kiel
关键词
D O I
10.1016/0039-6028(93)90834-7
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The unoccupied electronic band structure of the Ge(001)2 x 1 surface along the GAMMAJJ'BAR line of the surface Brillouin zone is investigated in an energy regime from the vacuum level up to about 22 eV above the valence band maximum (VBM) by applying a new constant initial band (CIB) mode of angle-resolved photoelectron spectroscopy using synchrotron radiation. In this mode final energy and photon energy are simultaneously scanned in accordance with energy and momentum conservation using a preselected dispersive initial band. We have chosen the well known occupied dangling-bond band as initial band which lies close to the uppermost bulk band at k(perpendicular-to) = 0. Several bulk emission features are observed, showing good agreement with pseudopotential bands. In addition, about 13 eV above VBM we observe an emission revealing the periodicity of the reconstructed surface being attributable to a surface state. Constant initial energy spectra taken at normal emission further support its two-dimensionality.
引用
收藏
页码:520 / 523
页数:4
相关论文
共 50 条
[41]   Structural and magnetic properties of Ge1-xMnx/Ge(001) 2x1 diluted magnetic semiconductors [J].
de Padova, P ;
Quaresima, C ;
Perfetti, P ;
Zema, N ;
Grazioli, C ;
Veronese, M ;
Olivieri, B ;
Richter, MC ;
Heckmann, O ;
D'Orazio, F ;
Lucari, F ;
Hricovin, K .
JOURNAL DE PHYSIQUE IV, 2006, 132 :231-235
[42]   (2x1)-(1x1) phase transition on Ge(001): Dimer breakup and surface roughening [J].
van Vroonhoven, E ;
Zandvliet, HJW ;
Poelsema, B .
PHYSICAL REVIEW LETTERS, 2003, 91 (11)
[43]   SI INDIFFUSION ON GE(100)-(2X1) STUDIED BY CORE-LEVEL PHOTOEMISSION [J].
LIN, DS ;
MILLER, T ;
CHIANG, TC .
PHYSICAL REVIEW B, 1992, 45 (19) :11415-11418
[44]   Surface x-ray diffraction on K/Si(001)(2x1) and Cs/Si(001)(2x1) [J].
Meyerheim, HL ;
Jedrecy, N ;
Sauvage-Simkin, M ;
Pinchaux, R .
PHYSICAL REVIEW B, 1998, 58 (04) :2118-2125
[45]   PHOTOEMISSION-STUDIES OF SURFACE-STATES ON SI(111)2X1 [J].
HANSSON, GV ;
UHRBERG, RIG ;
NICHOLLS, JM .
SURFACE SCIENCE, 1983, 132 (1-3) :31-39
[46]   Dispersive Electronic States of the π-Orbitals Stacking in Single Molecular Lines on the Si(001)-(2x1)-H Surface [J].
Kamakura, Shin-ichi ;
Jung, Jaehoon ;
Minato, Taketoshi ;
Kim, Yousoo ;
Hossain, Md. Zakir ;
Kato, Hiroyuki S. ;
Munakata, Toshiaki ;
Kawai, Maki .
JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2013, 4 (07) :1199-1204
[47]   Fabrication of an inverse photoemission spectrometer to study unoccupied electronic states [J].
Shukla, AK ;
Banik, S ;
Barman, SR .
CURRENT SCIENCE, 2006, 90 (04) :490-496
[48]   SURFACE ELECTRONIC-STRUCTURE OF CLEAN AND HYDROGEN CHEMISORBED GE(100)2X1 STUDIED BY ANGLE-RESOLVED PHOTOEMISSION [J].
LANDEMARK, E ;
JOHANSSON, LSO ;
KARLSSON, CJ ;
UHRBERG, RIG .
VACUUM, 1990, 41 (1-3) :635-637
[49]   ON THE ELECTRONIC-STRUCTURE OF CLEAN, 2X1 RECONSTRUCTED SILICON (001) SURFACES [J].
MONCH, W ;
KOKE, P ;
KRUEGER, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :313-318
[50]   Energetic evidence for mixed dimer growth on the Si(001)/Ge(2x1) surface [J].
Jenkins, SJ ;
Srivastava, GP .
SURFACE SCIENCE, 1997, 377 (1-3) :887-890