COMPARISON OF CF4-O2 AND CF2CL2-O2 PLASMAS USED FOR THE REACTIVE ION ETCHING OF SINGLE-CRYSTAL SILICON

被引：19

作者：

PARASZCZAK, J

HATZAKIS, M

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 04期

关键词：

D O I：

10.1116/1.571221

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1412 / 1417

页数：6

相关论文

共 39 条

[1] ADAMS AC, 1981, J ELECTROCHEM SOC, V128, P365
[2] PREPARATION + PROPERTIES OF CRYSTALLINE GOLD TRIFLUORIDE
ASPREY, LB
KRUSE, FH
JACK, KH
MAITLAND, R
[J]. INORGANIC CHEMISTRY, 1964, 3 (04) : 602 - &
[3] CF4 ETCHING IN A DIODE SYSTEM
BONDUR, JA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (02) : 226 - 231
[4] BUNYARD GB, 1977, SOLID STATE TECH DEC, P53
[5] ION-SURFACE INTERACTIONS IN PLASMA ETCHING
COBURN, JW
WINTERS, HF
CHUANG, TJ
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3532 - 3540
[6] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING
COBURN, JW
WINTERS, HF
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196
[7] SOME CHEMICAL ASPECTS OF THE FLUOROCARBON PLASMA ETCHING OF SILICON AND ITS COMPOUNDS
COBURN, JW
KAY, E
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1979, 23 (01) : 33 - 41
[8] OPTICAL-EMISSION SPECTROSCOPY OF REACTIVE PLASMAS - A METHOD FOR CORRELATING EMISSION INTENSITIES TO REACTIVE PARTICLE DENSITY
COBURN, JW
CHEN, M
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3134 - 3136
[9] COBURN JW, 1977, 7TH P INT VAC C 3RD, P1257
[10] DONELLY VM, 1980, J APPL PHYS, V51, P5273

← 1 2 3 4 →