(100) METAL ALLOY-FILMS CONTAINING BODY-CENTERED CUBIC AND FACE-CENTERED CUBIC METALS - RELATION BETWEEN STRUCTURES AND LATTICE SPACINGS

被引：2
作者：
CHANG, CA
机构：
[1] IBM T. J. Watson Research Center, Yorktown Heights
来源：
JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 09期
关键词：
D O I：
10.1063/1.352188
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
(100) oriented metal alloy films containing both body-centered cubic (bcc) and face-centered cubic (fcc) metals have been deposited on (100) Si using Pd/Cu seed layers. These include FeCo, FePt, FePd, FeCu, FeAu, FeAg, FeNi, VNi, and CrNi with different compositions. All the alloys show (200) spacings close to those of either the bec or fcc component metals. To compare with Vegard's rule, a correction factor of (1.5)1/2 is needed between the fcc and bcc lattices, with the fcc spacing being 22% larger. Twenty alloy spacings are compared, assuming that both the lattice structures and spacings of the alloy films are mainly determined by the component metals whose spacings are close to those of the alloys. Good agreements with the Vegard's rule are obtained for the thirteen (100) alloys with lattice spacings close to those of their respective bcc component metals, and for the seven (100) alloy films with lattice spacings close to their fcc component metals.
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页码：4463 / 4465
页数：3
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共 36 条
[1]   GROWTH OF (100) AL/FE AND FE/AL/FE LAYERS USING THE TECHNIQUE OF METAL-METAL EPITAXY ON SILICON [J].
CHANG, CA .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (11) :5893-5895
[2]   OUTDIFFUSION OF CU THROUGH AU - COMPARISON OF (100) AND (111) CU FILMS EPITAXIALLY DEPOSITED ON SI, AND EFFECTS OF ANNEALING AMBIENTS [J].
CHANG, CA .
APPLIED PHYSICS LETTERS, 1989, 55 (26) :2754-2756
[3]   STRUCTURE AND MAGNETIZATION OF (100) FEW AND FEMO FILMS DEPOSITED ON (100) AU/PD/CU/SI(100) [J].
CHANG, CA .
SURFACE SCIENCE, 1991, 256 (1-2) :123-128
[4]   (100) AND (111) NI FILMS EPITAXIALLY GROWN ON CU BY THE METAL METAL EPITAXY ON SILICON TECHNIQUE NEAR ROOM TEMPERATURES [J].
CHANG, CA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (05) :3779-3784
[5]   FORMATION OF COPPER SILICIDES FROM CU(100)/SI(100) AND CU(111)/SI(111) STRUCTURES [J].
CHANG, CA .
JOURNAL OF APPLIED PHYSICS, 1990, 67 (01) :566-569
[6]   EPITAXY OF (100) CU ON (100) SI BY EVAPORATION NEAR ROOM TEMPERATURES - INPLANE EPITAXIAL RELATION AND CHANNELING ANALYSIS [J].
CHANG, CA ;
LIU, JC ;
ANGILELLO, J .
APPLIED PHYSICS LETTERS, 1990, 57 (21) :2239-2240
[7]   DEPOSITION OF (100) AU, AG, PD, PT, AND FE ON (100) SI USING DIFFERENT METAL SEED LAYERS [J].
CHANG, CA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (01) :98-101
[8]   INTERFACE EPITAXY AND SELF-EPITAXY OF METALS NEAR ROOM TEMPERATURES [J].
CHANG, CA .
PHYSICAL REVIEW B, 1990, 42 (18) :11946-11949
[9]   MAGNETIZATION OF (100)CU-NI, (100)CU-CO, AND (100)NI-CO SUPERLATTICES DEPOSITED ON SILICON USING A CU SEED LAYER [J].
CHANG, CA .
APPLIED PHYSICS LETTERS, 1990, 57 (03) :297-299
[10]   MAGNETOCRYSTALLINE ANISOTROPY OF (100) FACE-CENTERED CUBIC CO STRUCTURES DEPOSITED ON CU/SI(100) [J].
CHANG, CA .
APPLIED PHYSICS LETTERS, 1991, 58 (16) :1745-1747
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