首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
IMPROVED METHOD OF ETCHING BY ION BOMBARDMENT
被引:1
|
作者
:
BIERLEIN, TK
论文数:
0
引用数:
0
h-index:
0
BIERLEIN, TK
MASTEL, B
论文数:
0
引用数:
0
h-index:
0
MASTEL, B
机构
:
来源
:
REVIEW OF SCIENTIFIC INSTRUMENTS
|
1959年
/ 30卷
/ 09期
关键词
:
D O I
:
10.1063/1.1716768
中图分类号
:
TH7 [仪器、仪表];
学科分类号
:
0804 ;
080401 ;
081102 ;
摘要
:
引用
收藏
页码:832 / 833
页数:2
相关论文
共 50 条
[41]
Simulation based plasma reactor design for improved ion bombardment uniformity
Kim, HC
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Calif Los Angeles, Dept Chem Engn, Los Angeles, CA 90095 USA
Univ Calif Los Angeles, Dept Chem Engn, Los Angeles, CA 90095 USA
Kim, HC
Manousiouthakis, VI
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Calif Los Angeles, Dept Chem Engn, Los Angeles, CA 90095 USA
Univ Calif Los Angeles, Dept Chem Engn, Los Angeles, CA 90095 USA
Manousiouthakis, VI
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
2000,
18
(02):
: 841
-
847
[42]
CATHODIC BOMBARDMENT ETCHING OF NUCLEAR MATERIALS
ARMSTRONG, D
论文数:
0
引用数:
0
h-index:
0
ARMSTRONG, D
MADSEN, PE
论文数:
0
引用数:
0
h-index:
0
MADSEN, PE
SYKES, EC
论文数:
0
引用数:
0
h-index:
0
SYKES, EC
JOURNAL OF NUCLEAR MATERIALS,
1959,
1
(02)
: 127
-
135
[43]
IMPROVED FORM OF OSCILLATING ELECTRON ELECTROSTATIC ION-SOURCE FOR ION ETCHING
GHANDER, AM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ASTON,DEPT PHYS,GOSTA GREEN,BIRMINGHAM B4 7ET,ENGLAND
UNIV ASTON,DEPT PHYS,GOSTA GREEN,BIRMINGHAM B4 7ET,ENGLAND
GHANDER, AM
FITCH, RK
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ASTON,DEPT PHYS,GOSTA GREEN,BIRMINGHAM B4 7ET,ENGLAND
UNIV ASTON,DEPT PHYS,GOSTA GREEN,BIRMINGHAM B4 7ET,ENGLAND
FITCH, RK
VACUUM,
1974,
24
(10)
: 483
-
487
[44]
MECHANISM OF CLEANING AND ETCHING SI SURFACES WITH LOW-ENERGY CHLORINE ION-BOMBARDMENT
BELLO, I
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Materials Engineering, Surface Science Western, University of Western Ontario, London
BELLO, I
CHANG, WH
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Materials Engineering, Surface Science Western, University of Western Ontario, London
CHANG, WH
LAU, WM
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Materials Engineering, Surface Science Western, University of Western Ontario, London
LAU, WM
JOURNAL OF APPLIED PHYSICS,
1994,
75
(06)
: 3092
-
3097
[45]
FABRICATION OF A GRATING PATTERN WITH SUBMICROMETER DIMENSION IN SILICON CRYSTAL BY ION-BOMBARDMENT-ENHANCED ETCHING
论文数:
引用数:
h-index:
机构:
MORIWAKI, K
MASUDA, N
论文数:
0
引用数:
0
h-index:
0
机构:
Osaka University, Toyonaka, Osaka, 560, Japan
MASUDA, N
ARITOME, H
论文数:
0
引用数:
0
h-index:
0
机构:
Osaka University, Toyonaka, Osaka, 560, Japan
ARITOME, H
NAMBA, S
论文数:
0
引用数:
0
h-index:
0
机构:
Osaka University, Toyonaka, Osaka, 560, Japan
NAMBA, S
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(03)
: 491
-
494
[46]
Ultrathin channel vertical DG MOSFET fabricated by using ion-bombardment-retarded etching
Masahara, M
论文数:
0
引用数:
0
h-index:
0
机构:
Natl Inst Adv Ind Sci & Technol, AIST, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan
Natl Inst Adv Ind Sci & Technol, AIST, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan
Masahara, M
Liu, YX
论文数:
0
引用数:
0
h-index:
0
机构:
Natl Inst Adv Ind Sci & Technol, AIST, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan
Natl Inst Adv Ind Sci & Technol, AIST, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan
Liu, YX
Hosokawa, S
论文数:
0
引用数:
0
h-index:
0
机构:
Natl Inst Adv Ind Sci & Technol, AIST, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan
Natl Inst Adv Ind Sci & Technol, AIST, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan
Hosokawa, S
Matsukawa, T
论文数:
0
引用数:
0
h-index:
0
机构:
Natl Inst Adv Ind Sci & Technol, AIST, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan
Natl Inst Adv Ind Sci & Technol, AIST, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan
Matsukawa, T
Ishii, K
论文数:
0
引用数:
0
h-index:
0
机构:
Natl Inst Adv Ind Sci & Technol, AIST, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan
Natl Inst Adv Ind Sci & Technol, AIST, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan
Ishii, K
Tanoue, H
论文数:
0
引用数:
0
h-index:
0
机构:
Natl Inst Adv Ind Sci & Technol, AIST, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan
Natl Inst Adv Ind Sci & Technol, AIST, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan
Tanoue, H
Sakamoto, K
论文数:
0
引用数:
0
h-index:
0
机构:
Natl Inst Adv Ind Sci & Technol, AIST, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan
Natl Inst Adv Ind Sci & Technol, AIST, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan
Sakamoto, K
Sekigawa, T
论文数:
0
引用数:
0
h-index:
0
机构:
Natl Inst Adv Ind Sci & Technol, AIST, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan
Natl Inst Adv Ind Sci & Technol, AIST, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan
Sekigawa, T
Yamauchi, H
论文数:
0
引用数:
0
h-index:
0
机构:
Natl Inst Adv Ind Sci & Technol, AIST, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan
Natl Inst Adv Ind Sci & Technol, AIST, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan
Yamauchi, H
Kanemaru, S
论文数:
0
引用数:
0
h-index:
0
机构:
Natl Inst Adv Ind Sci & Technol, AIST, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan
Natl Inst Adv Ind Sci & Technol, AIST, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan
Kanemaru, S
Suzuki, E
论文数:
0
引用数:
0
h-index:
0
机构:
Natl Inst Adv Ind Sci & Technol, AIST, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan
Natl Inst Adv Ind Sci & Technol, AIST, Nanoelect Res Inst, Tsukuba, Ibaraki 3058568, Japan
Suzuki, E
IEEE TRANSACTIONS ON ELECTRON DEVICES,
2004,
51
(12)
: 2078
-
2085
[47]
ION-BOMBARDMENT-INDUCED IMPROVEMENT OF PHOTORESIST MASK PROPERTIES FOR RF SPUTTER-ETCHING
IIDA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,CENT RES LABS,TAKATSU KU,KAWASAKI 213,JAPAN
NIPPON ELECT CO LTD,CENT RES LABS,TAKATSU KU,KAWASAKI 213,JAPAN
IIDA, Y
OKABAYASHI, H
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,CENT RES LABS,TAKATSU KU,KAWASAKI 213,JAPAN
NIPPON ELECT CO LTD,CENT RES LABS,TAKATSU KU,KAWASAKI 213,JAPAN
OKABAYASHI, H
SUZUKI, K
论文数:
0
引用数:
0
h-index:
0
机构:
NIPPON ELECT CO LTD,CENT RES LABS,TAKATSU KU,KAWASAKI 213,JAPAN
NIPPON ELECT CO LTD,CENT RES LABS,TAKATSU KU,KAWASAKI 213,JAPAN
SUZUKI, K
JAPANESE JOURNAL OF APPLIED PHYSICS,
1977,
16
(08)
: 1313
-
1318
[48]
Correlation between the adhesion and the thermal contact resistance: effects of substrate surface ion bombardment etching
Lahmar, A
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Nantes, ISITEM, CNRS, UMR 6607,Lab Thermocinet, F-44306 Nantes 03, France
Univ Nantes, ISITEM, CNRS, UMR 6607,Lab Thermocinet, F-44306 Nantes 03, France
Lahmar, A
论文数:
引用数:
h-index:
机构:
Hmina, N
Scudeller, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Nantes, ISITEM, CNRS, UMR 6607,Lab Thermocinet, F-44306 Nantes 03, France
Univ Nantes, ISITEM, CNRS, UMR 6607,Lab Thermocinet, F-44306 Nantes 03, France
Scudeller, Y
Bardon, JP
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Nantes, ISITEM, CNRS, UMR 6607,Lab Thermocinet, F-44306 Nantes 03, France
Univ Nantes, ISITEM, CNRS, UMR 6607,Lab Thermocinet, F-44306 Nantes 03, France
Bardon, JP
THIN SOLID FILMS,
1998,
325
(1-2)
: 156
-
162
[49]
SELECTIVE ION-BOMBARDMENT FOR THE CONTROL OF LASER-INDUCED PHOTOCHEMICAL DRY ETCHING OF SEMICONDUCTORS
ASHBY, CIH
论文数:
0
引用数:
0
h-index:
0
ASHBY, CIH
MYERS, DR
论文数:
0
引用数:
0
h-index:
0
MYERS, DR
VOOK, FL
论文数:
0
引用数:
0
h-index:
0
VOOK, FL
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1989,
136
(03)
: 782
-
785
[50]
Versatile Approach of Silicon Nanofabrication without Resists: Helium Ion-Bombardment Enhanced Etching
Wen, Xiaolei
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Sci & Technol China, Ctr Micro & Nanoscale Res & Fabricat, Hefei 230026, Peoples R China
Univ Sci & Technol China, Ctr Micro & Nanoscale Res & Fabricat, Hefei 230026, Peoples R China
Wen, Xiaolei
Zhang, Lansheng
论文数:
0
引用数:
0
h-index:
0
机构:
Zhejiang Univ, ZJUI Inst, Haining 314400, Peoples R China
Univ Sci & Technol China, Ctr Micro & Nanoscale Res & Fabricat, Hefei 230026, Peoples R China
Zhang, Lansheng
Tian, Feng
论文数:
0
引用数:
0
h-index:
0
机构:
Zhejiang Univ, ZJUI Inst, Haining 314400, Peoples R China
Zhejiang Univ, Sch Micronano Elect, Hangzhou 310027, Peoples R China
Univ Sci & Technol China, Ctr Micro & Nanoscale Res & Fabricat, Hefei 230026, Peoples R China
Tian, Feng
Xu, Yang
论文数:
0
引用数:
0
h-index:
0
机构:
Zhejiang Univ, Sch Micronano Elect, Hangzhou 310027, Peoples R China
Univ Sci & Technol China, Ctr Micro & Nanoscale Res & Fabricat, Hefei 230026, Peoples R China
Xu, Yang
Hu, Huan
论文数:
0
引用数:
0
h-index:
0
机构:
Zhejiang Univ, ZJUI Inst, Haining 314400, Peoples R China
Zhejiang Univ, State Key Lab Fluid Power & Mech Syst, Hangzhou 310027, Peoples R China
Univ Sci & Technol China, Ctr Micro & Nanoscale Res & Fabricat, Hefei 230026, Peoples R China
Hu, Huan
NANOMATERIALS,
2022,
12
(19)
←
1
2
3
4
5
→