SOME KEY PROPERTIES OF LOW-DIMENSIONAL ELECTRON-GAS IN SEMICONDUCTORS

被引：0
|
作者：
BASU, PK
机构：
[1] Institute of Radio Physics and Electronics, Calcutta University, Calcutta, 700 009
来源：
BULLETIN OF MATERIALS SCIENCE | 1990年 / 13卷 / 1-2期
关键词：
electron and optical devices; engineered structures; Low-dimensional electron gas; semiconductors;
D O I：
10.1007/BF02744859
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Conditions for the formation of low-dimensional electron gas in semiconductors and different structures supporting it are discussed. Some of the new devices in which carriers have low-dimensional motion are introduced. The properties of electrons needed to be studied for the optimisation of the device performance are mentioned. In particular, the charge control and mobility of electrons in high electron mobility transistors, gain and loss processes in quantum well lasers, and excitonic line width in multiple quantum wells are discussed. © 1990 The Indian Academy of Sciences.
引用
收藏
页码：65 / 74
页数：10
相关论文
共 50 条
12345