STRAIN-INDUCED EFFECTS IN (111)-ORIENTED INASP/INP, INGAAS/INP, AND INGAAS/INALAS QUANTUM-WELLS ON INP SUBSTRATES

被引：42
作者：
CHEN, WQ
HARK, SK
机构：
[1] Department of Physics, Chinese University of Hong Kong, Shatin, NT
来源：
JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 11期
关键词：
D O I：
10.1063/1.359219
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Strain-induced effects in quantum wells of InAsxP 1-x/InP, InxGa1-xAs/InP, and In xGa1-xAs/ In0.52Al0.48As on (111) InP substrates are investigated. The strain induces a large piezoelectric field in these structures, and causes a large change in their energy band edges. Consequently the band structure of the quantum wells is dramatically modified, and the dependence of interband transition energies on alloy composition is different from that of quantum wells on (100) substrates. Moreover, a larger critical layer thickness is found for the quantum wells studied. © 1995 American Institute of Physics.
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页码：5747 / 5750
页数：4
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