ANALYSIS OF INFRARED ATTENUATED TOTAL-REFLECTION SPECTRA FROM THIN SIO2-FILMS ON SI

被引：17

作者：

BJORKMAN, CH ^{[1
]}

YAMAZAKI, T ^{[1
]}

MIYAZAKI, S ^{[1
]}

HIROSE, M ^{[1
]}

机构：

[1] HIROSHIMA UNIV, DEPT ELECT ENGN, HIGASHIHIROSHIMA 724, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 01期

关键词：

D O I：

10.1063/1.359394

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Infrared attenuated total reflection spectra from thin SiO2 films sandwiched between a Ge prism and a Si substrate were investigated. The measurements were performed in the range of Si-O-Si stretching vibrations and compared with calculated spectra using bulk values for the SiO2 dielectric function. This comparison enabled confirmation of the experimentally observed peak broadening and peak shift of the longitudinal-optical-phonon mode at ∼1250 cm-1 for films thicker than 30 Å by using the exact expression for calculating p-polarized spectra. It is also shown that the linear approximation for vibrational spectroscopy in this frequency range is only valid for thicknesses less than 15 Å. © 1995 American Institute of Physics.

引用

页码：313 / 317

页数：5

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