MONTE-CARLO SIMULATIONS OF SPATIAL CORRELATION-EFFECTS OF CHARGED CENTERS IN DELTA-DOPING LAYERS

被引：20

作者：

SOBKOWICZ, P

WILAMOWSKI, Z

KOSSUT, J

机构：

[1] Inst. of Phys., Polish Acad. of Sci., Warsaw

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 09期

关键词：

D O I：

10.1088/0268-1242/7/9/003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents results of Monte Carlo simulations of a system of charged donors in delta-doping layers, aiming at elucidating the effects related to a spatial correlation of donor charges in a 2D configuration. The simulations yielded several quantities describing the system, among them the pair correlation functions, gain in the energy of the system due to correlation of charge locations and density of impurity states, all as functions of temperature. The calculations have direct application in analysis of the behaviour of the DX centres in GaAs planarly doped with Si.

引用

页码：1155 / 1161

页数：7

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