SILICON-CARBIDE MICROWAVE MESFET

被引:2
作者
CLARKE, RC [1 ]
OKEEFE, TW [1 ]
MCMULLIN, PG [1 ]
SMITH, TJ [1 ]
SRIRAM, S [1 ]
BARRETT, DL [1 ]
机构
[1] WESTINGHOUSE ELECT CORP,CTR SCI & TECHNOL,PITTSBURGH,PA 15235
关键词
D O I
10.1109/16.163535
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
[No abstract available]
引用
收藏
页码:2666 / 2666
页数:1
相关论文
共 2 条
  • [1] SIC BOULE GROWTH BY SUBLIMATION VAPOR TRANSPORT
    BARRETT, DL
    SEIDENSTICKER, RG
    GAIDA, W
    HOPKINS, RH
    CHOYKE, WJ
    [J]. JOURNAL OF CRYSTAL GROWTH, 1991, 109 (1-4) : 17 - 23
  • [2] PALMOUR JW, 1991, P INT SEMICOND DEVIC, P491