FEMTOSECOND ELECTRON AND HOLE THERMALIZATION IN ALGAAS

被引：33

作者：

BRADLEY, CWW

TAYLOR, RA

RYAN, JF

机构：

[1] Oxford Univ, United Kingdom

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 12期

关键词：

Phonons - Semiconductor Materials - Charge Carriers;

D O I：

10.1016/0038-1101(89)90209-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Femtosecond optical absorption spectra of AlxGa1-xAs reveal rapid thermalisation of the electron-hole plasma to a two-temperature carrier distribution after approx. 500fs. The carriers thermalise to a single-temperature distribution at approx. 10ps. Single phonon emission by electrons is observed at early times when the carrier density is low. Theoretical calculations which model analytically the principal carrier-carrier and carrier-phonon interactions responsible for thermalisation give good agreement with the data.

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页码：1173 / 1177

页数：5

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