RAPID THERMAL ANNEALING OF CO-SPUTTERED TANTALUM SILICIDE FILMS

被引：11
作者：
KWONG, DL
机构：
[1] Univ of Notre Dame, Dep of, Electrical Engineering, Notre Dame,, IN, USA, Univ of Notre Dame, Dep of Electrical Engineering, Notre Dame, IN, USA
来源：
THIN SOLID FILMS | 1984年 / 121卷 / 01期
关键词：
D O I：
10.1016/0040-6090(84)90523-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
TANTALUM COMPOUNDS
引用
收藏
页码：43 / 50
页数：8
相关论文
共 12 条
[1]   1 MU-M MOSFET VLSI TECHNOLOGY .7. METAL SILICIDE INTERCONNECTION TECHNOLOGY - FUTURE PERSPECTIVE [J].
CROWDER, BL ;
ZIRINSKY, S .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :369-371
[2]   MOSI2 FORMATION BY RAPID ISOTHERMAL ANNEALING [J].
FULKS, RT ;
POWELL, RA ;
STACY, WT .
ELECTRON DEVICE LETTERS, 1982, 3 (07) :179-181
[3]   COMPOSITE SILICIDE GATE ELECTRODES - INTERCONNECTIONS FOR VLSI DEVICE TECHNOLOGIES [J].
GEIPEL, HJ ;
HSIEH, N ;
ISHAQ, MH ;
KOBURGER, CW ;
WHITE, FR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1417-1424
[4]  
Gibbons J. F., 1984, Energy Beam-Solid Interactions and Transient Thermal Processing Symposium, P37
[5]  
Kwong D. L., 1984, Energy Beam-Solid Interactions and Transient Thermal Processing Symposium, P733
[6]   REFRACTORY SILICIDES OF TITANIUM AND TANTALUM FOR LOW-RESISTIVITY GATES AND INTERCONNECTS [J].
MURARKA, SP ;
FRASER, DB ;
SINHA, AK ;
LEVINSTEIN, HJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1409-1417
[7]  
MURARKA SP, 1983, SILICIDES VLSI APPLI
[8]   SHORT-TIME ANNEALING [J].
SEDGWICK, TO .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) :484-493
[9]  
SEDGWICK TO, 1983, 1983 P EL SOC SPRING
[10]   MOS COMPATIBILITY OF HIGH-CONDUCTIVITY TASI2-N+ POLY-SI GATES [J].
SINHA, AK ;
LINDENBERGER, WS ;
FRASER, DB ;
MURARKA, SP ;
FULS, EN .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (04) :490-495
12