AN ANALYTIC MODEL FOR THE BARRIER-LIMITED MODE OF OPERATION OF THE PERMEABLE BASE TRANSISTOR

被引:4
作者
FRENSLEY, WR
机构
关键词
D O I
10.1109/T-ED.1983.21422
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1624 / 1628
页数:5
相关论文
共 5 条
[1]  
[Anonymous], 1962, PHYS TODAY
[2]   FABRICATION AND NUMERICAL-SIMULATION OF THE PERMEABLE BASE TRANSISTOR [J].
BOZLER, CO ;
ALLEY, GD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1128-1141
[3]   BARRIER-LIMITED TRANSPORT IN SEMICONDUCTOR-DEVICES [J].
FRENSLEY, WR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (12) :1619-1623
[4]   FIELD-EFFECT TRANSISTOR VERSUS ANALOG TRANSISTOR (STATIC INDUCTION TRANSISTOR) [J].
NISHIZAWA, JI ;
TERASAKI, T ;
SHIBATA, J .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (04) :185-197
[5]   SMALL GEOMETRY DEPLETED BASE BIPOLAR-TRANSISTORS (BSIT) - VLSI DEVICES [J].
STORK, JMC ;
PLUMMER, JD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (11) :1354-1363