COMPARISON OF GROUP-4 AND GROUP-6 DOPING BY IMPLANTATION IN GAAS

被引：23

作者：

DAVIES, DE ^{[1
]}

KENNEDY, JK ^{[1
]}

LUDINGTON, CE ^{[1
]}

机构：

[1] USAF,SYST COMMAND,RES LABS,BEDFORD,MA 01730

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 10期

关键词：

D O I：

10.1149/1.2134020

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1374 / 1377

页数：4

共 10 条

[1]

ALLEN RM, 1970, EUROPEAN C ION IMPLA, P126

[2] ROLE OF ELEVATED-TEMPERATURES IN IMPLANTATION OF GAAS [J].

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LOWE, L .

SOLID-STATE ELECTRONICS, 1975, 18 (09) :733-736

[3] COMPENSATION FROM IMPLANTATION IN GAAS [J].

DAVIES, DE ;

KENNEDY, JK ;

YANG, AC .

APPLIED PHYSICS LETTERS, 1973, 23 (11) :615-616

[4]

EISEN FH, 1974, 4TH INT C ION IMPL O

[5]

EISEN FH, 1973, ION IMPLANTATION SEM, P631

[6] EFFICIENT DOPING OF GAAS BY SE+ ION IMPLANTATION [J].

FOYT, AG ;

DONNELLY, JP ;

LINDLEY, WT .

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[7] OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE [J].

GYULAI, J ;

MAYER, JW ;

MITCHELL, IV ;

RODRIGUEZ, V .

APPLIED PHYSICS LETTERS, 1970, 17 (08) :332-+

[8] INFLUENCE OF IMPLANTATION TEMPERATURE AND SURFACE PROTECTION ON TELLURIUM IMPLANTATION IN GAAS [J].

HARRIS, JS ;

MAYER, JW ;

EISEN, FH ;

HASKELL, JD ;

WELCH, B ;

PASHLEY, RD .

APPLIED PHYSICS LETTERS, 1972, 21 (12) :601-&

[9] HALL-EFFECT MEASUREMENTS OF ZN IMPLANTED GAAS [J].

YUBA, Y ;

GAMO, K ;

MASUDA, K ;

NAMBA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (04) :641-644

[10]

ZELEVINSKAYA VM, 1971, SOV PHYS SEMICOND+, V4, P1529

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