The evolution of graphene-based electronic devices

被引：41
作者：
Basu, Joydeep [1 ]
Basu, Jayanta Kumar [2 ]
Bhattacharyya, Tarun Kanti [1 ]
机构：
[1] Indian Inst Technol, Dept Elect & Elect Commun Engn, Kharagpur 721302, W Bengal, India
[2] Indian Inst Technol, Dept Chem Engn, Kharagpur 721302, W Bengal, India
来源：
INTERNATIONAL JOURNAL OF SMART AND NANO MATERIALS | 2010年 / 1卷 / 03期
关键词：
electronic device; FET; field effect; graphene; nanoelectronics;
D O I：
10.1080/19475411.2010.510856
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Successful isolation of single-layer graphene, the two-dimensional allotrope of carbon from graphite, has fuelled a lot of interest in exploring the feasibility of using it for fabrication of various electronic devices, particularly because of its exceptional electronic properties. Graphene is poised to save Moore's law by acting as a successor of silicon-based electronics. This article reviews the success story of this allotrope with a focus on the structure, properties and preparation of graphene as well as its various device applications.
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收藏
页码：201 / 223
页数：23
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