FABRICATION OF LARGE-SCALE OPTICAL-COMPONENTS IN SILICON BY REACTIVE ION ETCHING

被引：12

作者：

DARBYSHIRE, DA

PITT, CW

STRIDE, AA

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 02期

关键词：

D O I：

10.1116/1.583951

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：575 / 578

页数：4

共 12 条

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[5] PROFILE CONTROL OF POLYSILICON LINES WITH AN SF6/O2 PLASMA ETCH PROCESS [J].

LIGHT, RW ;

BELL, HB .

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[6] MECHANISM OF SILICON ETCHING BY A CF4 PLASMA [J].

MAUER, JL ;

LOGAN, JS ;

ZIELINSKI, LB ;

SCHWARTZ, GC .

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[7] ANISOTROPIC-PLASMA ETCHING OF POLYSILICON USING SF6 AND CFCL3 [J].

MIETH, M ;

BARKER, A .

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[8]

Mieth M., 1984, Semiconductor International, V7, P222

[9] ANISOTROPIC AND SELECTIVE REACTIVE ION ETCHING OF POLYSILICON USING SF6 [J].

PARRENS, P .

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[10]

STINSON L, 1973, J ELECTROCHEM SOC, V120, pC93

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