GROWTH OF INP BY METALORGANIC CHEMICAL VAPOR-DEPOSITION (MOCVD)

被引：0

作者：

DUPUIS, RD

LYNCH, RT

THURMOND, CD

BONNER, WA

机构：

来源：

PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS | 1982年 / 323卷

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D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：131 / 136

页数：6

共 15 条

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[7] LIQUID-PHASE EPITAXY OF INP [J].

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[8]

JOYCE BD, 1971, GAAS RELATED COMPOUN, P57

[9] USE OF METALORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .5. FORMATION OF IN-GROUP V COMPOUNDS AND ALLOYS [J].

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SIMPSON, WI .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) :135-137

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