ANNEALING OF RADIATION INDUCED DEFECTS IN SILICON

被引：8
|
作者：
FANG, PH
机构：
来源：
PHYSICS LETTERS | 1966年 / 20卷 / 04期
关键词：
D O I：
10.1016/0031-9163(66)90730-X
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：343 / &
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