INFRARED-SPECTROSCOPY OF AMORPHOUS HYDROGENATED GAAS - EVIDENCE FOR H-BRIDGES

被引:46
作者
WANG, ZP
LEY, L
CARDONA, M
机构
来源
PHYSICAL REVIEW B | 1982年 / 26卷 / 06期
关键词
D O I
10.1103/PhysRevB.26.3249
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:3249 / 3258
页数:10
相关论文
共 27 条
[1]   INFLUENCE OF HYDROGEN PARTIAL-PRESSURE ON DEPOSITION AND PROPERTIES OF SPUTTERED AMORPHOUS GALLIUM-ARSENIDE [J].
ALIMOUSSA, L ;
CARCHANO, H ;
THOMAS, JP .
JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :683-686
[2]   STRESS DEPENDENCE OF RAMAN FREQUENCIES AND ELASTIC-CONSTANTS OF CUBIC SEMICONDUCTORS [J].
BELL, MI .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1972, 53 (02) :675-&
[3]   INFRARED-ABSORPTION IN HYDROGENATED AMORPHOUS AND CRYSTALLIZED GERMANIUM [J].
BERMEJO, D ;
CARDONA, M .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) :421-430
[4]  
BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556
[5]   STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J].
BRODSKY, MH ;
TITLE, RS ;
WEISER, K ;
PETTIT, GD .
PHYSICAL REVIEW B, 1970, 1 (06) :2632-&
[6]   RAMAN SCATTERING IN GRAY TIN [J].
BUCHENAU.CJ ;
CARDONA, M ;
POLLAK, FH .
PHYSICAL REVIEW B, 1971, 3 (04) :1243-&
[7]   HYDROGEN CONTENT OF A-GE-H AND A-SI-H AS DETERMINED BY IR SPECTROSCOPY, GAS EVOLUTION AND NUCLEAR-REACTION TECHNIQUES [J].
FANG, CJ ;
GRUNTZ, KJ ;
LEY, L ;
CARDONA, M ;
DEMOND, FJ ;
MULLER, G ;
KALBITZER, S .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :255-260
[8]   NEGATIVE-U STATES IN GAP IN HYDROGENATED AMORPHOUS SILICON [J].
FISCH, R ;
LICCIARDELLO, DC .
PHYSICAL REVIEW LETTERS, 1978, 41 (13) :889-891
[9]   OPTICAL-CONSTANTS OF RF SPUTTERED HYDROGENATED AMORPHOUS SI [J].
FREEMAN, EC ;
PAUL, W .
PHYSICAL REVIEW B, 1979, 20 (02) :716-728
[10]   CONDUCTION IN SPUTTERED HYDROGENATED III-V COMPOUNDS [J].
HARGREAVES, M ;
THOMPSON, MJ ;
TURNER, D .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :403-408