DIRECT MEASUREMENT OF THE CARRIER LEAKAGE OUT OF THE ACTIVE-REGION IN INGAASP/INP LASER HETEROSTRUCTURES

被引：21
作者：
BELENKY, GL
KAZARINOV, RF
LOPATA, J
LURYI, S
TANBUNELK, T
GARBINSKI, PA
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1995年 / 42卷 / 02期
关键词：
D O I：
10.1109/16.370077
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Leakage of electrons out of the active region of InGaAsP/InP laser heterostructures at different temperatures was measured by a purely electrical method. Comparison of the obtained results with the results of modeling indicates that special attention should be paid to the acceptor doping levels in the p cladding layer immediately adjacent the active region. Lower acceptor concentration may lead to unacceptably high thermionic leakage.
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页码：215 / 218
页数：4
相关论文
共 10 条
[1]   MEASUREMENT OF THE EFFECTIVE TEMPERATURE OF MAJORITY CARRIERS UNDER INJECTION OF HOT MINORITY-CARRIERS IN HETEROSTRUCTURES [J].
BELENKY, GL ;
KASTALSKY, A ;
LURYI, S ;
GARBINSKI, PA ;
CHO, AY ;
SIVCO, DL .
APPLIED PHYSICS LETTERS, 1994, 64 (17) :2247-2249
[2]   DIRECT MEASUREMENT OF THE CARRIER LEAKAGE IN AN INGAASP INP LASER [J].
CHEN, TR ;
MARGALIT, S ;
KOREN, U ;
YU, KL ;
CHIU, LC ;
HASSON, A ;
YARIV, A .
APPLIED PHYSICS LETTERS, 1983, 42 (12) :1000-1002
[3]   A THEORETICAL-ANALYSIS OF AUGER RECOMBINATION INDUCED ENERGETIC CARRIER LEAKAGE IN GAINASP-INP DOUBLE HETEROJUNCTION LASERS AND LIGHT-EMITTING DIODES [J].
CHIK, KD .
JOURNAL OF APPLIED PHYSICS, 1988, 63 (09) :4688-4698
[4]  
GARBUZOV DZ, 1991, SOV PHYS SEMICOND+, V25, P560
[5]  
GRINBERG AA, 1994, J APPL PHYS APR
[6]  
KAZARINOV RF, IN PRESS IEEE J QUAN
[7]  
KETELSEN LJP, IN PRESS CARRIER LOS
[8]   BAND-GAP ENHANCED CARRIER HEATING IN INGAASP/INP DOUBLE HETEROSTRUCTURE LIGHT-EMITTING-DIODES [J].
WADA, O ;
YAMAKOSHI, S ;
SAKURAI, T .
APPLIED PHYSICS LETTERS, 1982, 41 (10) :981-983
[9]   DIRECT OBSERVATION OF ELECTRON LEAKAGE IN INGAASP/INP DOUBLE HETEROSTRUCTURE [J].
YAMAKOSHI, S ;
SANADA, T ;
WADA, O ;
UMEBU, I ;
SAKURAI, T .
APPLIED PHYSICS LETTERS, 1982, 40 (02) :144-146
[10]  
ZHUANG WH, 1985, IEEE J QUANTUM ELECT, V21, P712, DOI 10.1109/JQE.1985.1072699
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