PHOTOACOUSTIC IMAGING OF ION-IMPLANTED SEMICONDUCTOR SAMPLES

被引：4
|
作者：
BODZENTA, J
PUSTELNA, B
KLESZCZEWSKI, Z
机构：
[1] Silesian Technical University, Institute of Physics, 44-100 Gliwice
来源：
ULTRASONICS | 1993年 / 31卷 / 05期
关键词：
PHOTOACOUSTIC IMAGING; THERMAL WAVE IMAGING; NDE; ION-IMPLANTED SILICON;
D O I：
10.1016/0041-624X(93)90063-6
中图分类号：
O42 [声学];
学科分类号：
070206 ; 082403 ;
摘要：
A short description of a measuring technique concept which makes use of the photothermal effect is given. An analysis of applications of the technique for testing semiconductors and semiconductor structures is made, and an experimental apparatus for photoacoustic imaging is described. Results of an investigation of ion-implanted silicon wafers are presented, which show the possibilities of photoacoustic imaging of ion-implanted regions in semiconductors. Alterations of sample properties caused by technological processes, such as annealing, can be observed using the method. The main advantage of the method is its non-destructive character.
引用
收藏
页码：315 / 319
页数：5
相关论文
共 50 条
  • [21] CHARACTERISTICS OF ION-IMPLANTED CONTACTS FOR NUCLEAR PARTICLE DETECTORS .2. CONCENTRATION DISTRIBUTION IN ION-IMPLANTED CONTACTS FOR SEMICONDUCTOR DETECTORS
    MEYER, O
    NUCLEAR INSTRUMENTS & METHODS, 1969, 70 (03): : 285 - &
  • [22] Quantum effects on modulational amplification in ion-implanted semiconductor magnetoplasmas
    Sunita Pravesh
    Devender Dahiya
    Manjeet Singh
    Pramana, 97
  • [23] Comparison of the structures of evaporated and ion-implanted amorphous silicon samples
    Pusztai, L
    Kugler, S
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2005, 17 (17) : 2617 - 2624
  • [24] IMAGING OF DEFECTS AND RECRYSTALLIZATION STUDIES IN ION-IMPLANTED GRAPHITE
    SALAMANCARIBA, L
    BRAUNSTEIN, G
    DRESSELHAUS, MS
    GIBSON, JM
    ENDO, M
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR): : 487 - 492
  • [25] Photoacoustic and photoluminescence studies of H+ ion-implanted n-GaAs
    Srinivasan, R
    Sanjeeviraja, C
    Ramachandran, K
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2005, 202 (03): : 419 - 424
  • [26] TWO-DIMENSIONAL PHOTOACOUSTIC MAPPING OF ION-IMPLANTED AND LASER ANNEALED SEMICONDUCTORS
    MCFARLANE, RA
    HESS, LD
    OLSON, GL
    IEEE TRANSACTIONS ON SONICS AND ULTRASONICS, 1981, 28 (05): : 370 - 370
  • [27] PHOTOACOUSTIC SIGNALS FROM ION-IMPLANTED AND EPITAXIALLY GROWN LAYERS ON SILICON SUBSTRATE
    IKARI, T
    MAEDA, K
    FUTAGAMI, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (3A): : L351 - L353
  • [28] X-ray diffraction investigations of ion-implanted semiconductor crystals
    Haroutyunyan, VS
    Sedrakyan, AG
    Subotowicz, M
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1996, 156 (01): : 3 - 14
  • [29] Acousto-electric wave instability in ion-implanted semiconductor plasmas
    Ghosh, S
    Khare, P
    EUROPEAN PHYSICAL JOURNAL D, 2005, 35 (03): : 521 - 526
  • [30] Longitudinal electro-kinetic waves in ion-implanted semiconductor plasmas
    S. Ghosh
    Preeti Thakur
    The European Physical Journal D - Atomic, Molecular, Optical and Plasma Physics, 2004, 31 : 85 - 90
12345