PHOTOACOUSTIC IMAGING OF ION-IMPLANTED SEMICONDUCTOR SAMPLES

被引：4
|
作者：
BODZENTA, J
PUSTELNA, B
KLESZCZEWSKI, Z
机构：
[1] Silesian Technical University, Institute of Physics, 44-100 Gliwice
来源：
ULTRASONICS | 1993年 / 31卷 / 05期
关键词：
PHOTOACOUSTIC IMAGING; THERMAL WAVE IMAGING; NDE; ION-IMPLANTED SILICON;
D O I：
10.1016/0041-624X(93)90063-6
中图分类号：
O42 [声学];
学科分类号：
070206 ; 082403 ;
摘要：
A short description of a measuring technique concept which makes use of the photothermal effect is given. An analysis of applications of the technique for testing semiconductors and semiconductor structures is made, and an experimental apparatus for photoacoustic imaging is described. Results of an investigation of ion-implanted silicon wafers are presented, which show the possibilities of photoacoustic imaging of ion-implanted regions in semiconductors. Alterations of sample properties caused by technological processes, such as annealing, can be observed using the method. The main advantage of the method is its non-destructive character.
引用
收藏
页码：315 / 319
页数：5
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