1.5-MUM INGAASP DOUBLE-CHANNEL PLANAR-BURIED HETEROSTRUCTURE LASER-DIODES FABRICATED BY 2-STEP VAPOR-PHASE AND LIQUID-PHASE EPITAXIAL-GROWTH

被引：0
作者：
YANASE, T
SUGOU, S
KITAMURA, M
KATOU, Y
NISHI, K
NISHIMOTO, H
YAMAGUCHI, M
MITO, I
机构：
来源：
NEC RESEARCH & DEVELOPMENT | 1985年 / 79期
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页码：21 / 28
页数：8
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