CALCULATION OF SURFACE GENERATION AND RECOMBINATION VELOCITIES AT THE SI-SIO2 INTERFACE

[1] BORSUK JA, 1981, THESIS STANFORD U

[2] Curtis H. W., 1980, ASTM STP, V712, P210

[3] MEASUREMENT OF LOW DENSITIES OF SURFACE STATES AT SI-SIO2-INTERFACE [J]. SOLID-STATE ELECTRONICS, 1973, 16 (12) : 1451 - 1460

[4] DETERMINATION OF THE CAPTURE CROSS-SECTION AND DEGENERACY FACTOR OF SI-SIO2 INTERFACE STATES [J]. APPLIED PHYSICS LETTERS, 1984, 44 (10) : 988 - 990

[5] IMPROVEMENTS IN THE DETERMINATION OF INTERFACE STATE DENSITY USING DEEP LEVEL TRANSIENT SPECTROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) : 1744 - 1751

[6] Gupta D. S., 1983, Physica Status Solidi A, V80, P209, DOI 10.1002/pssa.2210800258

[7] USE OF 111-TRICHLOROETHANE AS AN OPTIMIZED ADDITIVE TO IMPROVE SILICON THERMAL-OXIDATION TECHNOLOGY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (10) : 1696 - 1703

[8] ENERGY-RESOLVED DLTS MEASUREMENT OF INTERFACE STATES IN MIS STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1979, 34 (11) : 802 - 804

[9] CHARACTERISTIC ELECTRONIC DEFECTS AT THE SI-SIO2 INTERFACE [J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 563 - 565

[10] MEASUREMENT OF INTERFACE DEFECT STATES AT OXIDIZED SILICON SURFACES BY CONSTANT-CAPACITANCE DLTS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1407 - 1411

[1] BORSUK JA, 1981, THESIS STANFORD U

[2] Curtis H. W., 1980, ASTM STP, V712, P210

[3] MEASUREMENT OF LOW DENSITIES OF SURFACE STATES AT SI-SIO2-INTERFACE [J]. SOLID-STATE ELECTRONICS, 1973, 16 (12) : 1451 - 1460

[4] DETERMINATION OF THE CAPTURE CROSS-SECTION AND DEGENERACY FACTOR OF SI-SIO2 INTERFACE STATES [J]. APPLIED PHYSICS LETTERS, 1984, 44 (10) : 988 - 990

[5] IMPROVEMENTS IN THE DETERMINATION OF INTERFACE STATE DENSITY USING DEEP LEVEL TRANSIENT SPECTROSCOPY [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) : 1744 - 1751

[6] Gupta D. S., 1983, Physica Status Solidi A, V80, P209, DOI 10.1002/pssa.2210800258

[7] USE OF 111-TRICHLOROETHANE AS AN OPTIMIZED ADDITIVE TO IMPROVE SILICON THERMAL-OXIDATION TECHNOLOGY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (10) : 1696 - 1703

[8] ENERGY-RESOLVED DLTS MEASUREMENT OF INTERFACE STATES IN MIS STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1979, 34 (11) : 802 - 804

[9] CHARACTERISTIC ELECTRONIC DEFECTS AT THE SI-SIO2 INTERFACE [J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 563 - 565

[10] MEASUREMENT OF INTERFACE DEFECT STATES AT OXIDIZED SILICON SURFACES BY CONSTANT-CAPACITANCE DLTS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1407 - 1411