GAAS-ALGAAS MQW AND GRINSCH LASERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：12

作者：

WEIMANN, G

SCHLAPP, W

机构：

来源：

PHYSICA B & C | 1985年 / 129卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(85)90623-0

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：459 / 464

页数：6

共 9 条

[1] THE GROWTH OF HIGH-QUALITY ALXGA1-XAS BY MOLECULAR-BEAM EPITAXY AND ITS APPLICATION TO DOUBLE-HETEROJUNCTION LASERS [J].

COLLINS, DM ;

MARS, DE ;

EGLASH, SJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :170-173

[2] EXTRINSIC LAYER AT ALXGA1-XAS-GAAS INTERFACES [J].

MILLER, RC ;

TSANG, WT ;

MUNTEANU, O .

APPLIED PHYSICS LETTERS, 1982, 41 (04) :374-376

[3] INTERFACIAL PROPERTIES OF (AL,GA)AS/GAAS STRUCTURES - EFFECT OF SUBSTRATE-TEMPERATURE DURING GROWTH BY MOLECULAR-BEAM EPITAXY [J].

MORKOC, H ;

DRUMMOND, TJ ;

FISCHER, R .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1030-1033

[4] EFFECT OF GROWTH TEMPERATURE ON THE PHOTO-LUMINESCENT SPECTRA FROM SN-DOPED GA1-XALXAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

SWAMINATHAN, V ;

TSANG, WT .

APPLIED PHYSICS LETTERS, 1981, 38 (05) :347-349

[5] EXTREMELY LOW THRESHOLD (ALGA)AS GRADED-INDEX WAVEGUIDE SEPARATE CONFINEMENT HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

TSANG, WT .

APPLIED PHYSICS LETTERS, 1982, 40 (03) :217-219

[6] INFRARED-VISIBLE (0.89-0.72 MU-M) ALXGA1-XAS-ALYGA1-YAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

TSANG, WT .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) :917-919

[7] EXTREMELY LOW THRESHOLD (ALGA) AS MODIFIED MULTIQUANTUM WELL HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

TSANG, WT .

APPLIED PHYSICS LETTERS, 1981, 39 (10) :786-788

[8]

WEIMANN G, UNPUB

[9]

WEIMANN G, 1984, SPRINGER SERIES SOLI, V53, P88

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