PRODUCTION OF TI-SI SURFACE ALLOYS ON TITANIUM BY ION-BEAM MIXING, AND THEIR OXIDATION BEHAVIOR

被引：7

作者：

GALERIE, A ^{[1
]}

DEARNALEY, G ^{[1
]}

机构：

[1] AERE,DIV NUCL PHYS,HARWELL OX11 0RA,OXON,ENGLAND

来源：

MATERIALS SCIENCE AND ENGINEERING | 1985年 / 69卷 / 02期

关键词：

ARGON - Ion Implantation - ION BEAMS;

D O I：

10.1016/0025-5416(85)90337-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Complete incorporation of 1250 A silicon layer into titanium was achieved by bombardment with argon ions. The minimum temperature required to achieve this mixing was 300 degree C. The silicon concentration in the mixed layer decreased with increasing beam energy, reaching about 50 at. % for the lowest (100 kev) energy studied and only about 32 at. % for the highest (400 kev) energy studied, whereas the depth of penetration increased. The crystallinity of this layer was always very poor. Evidence was obtained from the results that 'cascade mixing' was the predominant process involved and that no radiation-enhanced diffusion occurred.

引用

页码：381 / 390

页数：10

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