INFRARED-SPECTRUM OF INTERSTITIAL OXYGEN IN SILICON

被引：56

作者：

STAVOLA, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 05期

关键词：

D O I：

10.1063/1.94816

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：514 / 516

页数：3

共 20 条

[1] FAR INFRARED SPECTRUM AND STRUCTURE OF DISILOXANE [J].

ARONSON, JR ;

LORD, RC ;

ROBINSON, DW .

JOURNAL OF CHEMICAL PHYSICS, 1960, 33 (04) :1004-1007

[2] ABSORPTION OF OXYGEN IN SILICON IN NEAR AND FAR INFRARED [J].

BOSOMWORTH, DR ;

HAYES, W ;

SPRAY, ARL ;

WATKINS, GD .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1970, 317 (1528) :133-+

[3]

CHRENKO RM, 1965, PHYS REV, V138, P1775

[4] CONFIGURATION + DIFFUSION OF ISOLATED OXYGEN IN SILICON + GERMANIUM [J].

CORBETT, JW ;

MCDONALD, RS ;

WATKINS, GD .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (08) :873-&

[5] THE SPECTRUM AND STRUCTURE OF DISILOXANE [J].

CURL, RF ;

PITZER, KS .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1958, 80 (10) :2371-2373

[6] OXYGEN PRECIPITATION IN SILICON AT 650-DEGREES-C [J].

FREELAND, PE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) :754-756

[7] INFRARED ABSORPTION OF OXYGEN IN SILICON [J].

HROSTOWSKI, HJ ;

KAISER, RH .

PHYSICAL REVIEW, 1957, 107 (04) :966-972

[8] OXYGEN CONTENT OF SILICON SINGLE CRYSTALS [J].

KAISER, W ;

KECK, PH .

JOURNAL OF APPLIED PHYSICS, 1957, 28 (08) :882-887

[9] VIBRATIONAL SPECTRA AND STRUCTURE OF DISILOXANE AND DISILOXANE-D6 [J].

LORD, RC ;

ROBINSON, DW ;

SCHUMB, WC .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1956, 78 (07) :1327-1332

[10] FORCE CONSTANTS, INTERBOND ANGLE AND SOLID STATE SPECTRUM OF DISILOXANE [J].

MCKEAN, DC .

SPECTROCHIMICA ACTA, 1958, 13 (1-2) :38-42

← 1 2 →