IMPROVEMENT IN GAAS-MESFET DRAIN CONDUCTANCE BY A STEPLIKE-GATE STRUCTURE

被引：3
作者：
TOMIZAWA, M
UCHIDA, M
SUGETA, T
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 04期
关键词：
D O I：
10.1109/T-ED.1984.21547
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：435 / 439
页数：5
相关论文
共 7 条
[1]  
ASAI K, 1983, ISSCC DIGEST TECHNIC, P46
[2]   GENERALIZED ICCG METHOD FOR SOLUTION OF ASYMMETRIC, SPARSE, LINEAR-SYSTEMS OF DISCRETIZED SEMICONDUCTOR-DEVICE EQUATIONS [J].
CHANG, FY ;
WAGNER, LF .
ELECTRONICS LETTERS, 1982, 18 (15) :658-660
[3]   A SUB-HALF-MICRON GATE-LENGTH GAAS-MESFET WITH NEW GATE STRUCTURE [J].
IMAI, Y ;
UCHIDA, M ;
YAMAMOTO, K ;
HIRAYAMA, M .
IEEE ELECTRON DEVICE LETTERS, 1983, 4 (04) :99-101
[4]   ITERATIVE SOLUTION METHOD FOR LINEAR-SYSTEMS OF WHICH COEFFICIENT MATRIX IS A SYMMETRIC M-MATRIX [J].
MEIJERINK, JA ;
VANDERVORST, HA .
MATHEMATICS OF COMPUTATION, 1977, 31 (137) :148-162
[5]   SELF-ALIGN IMPLANTATION FOR N+-LAYER TECHNOLOGY (SAINT) FOR HIGH-SPEED GAAS ICS [J].
YAMASAKI, K ;
ASAI, K ;
MIZUTANI, T ;
KURUMADA, K .
ELECTRONICS LETTERS, 1982, 18 (03) :119-121
[6]   ANOMALOUS GATE-TO-DRAIN CAPACITANCE CHARACTERISTICS OF GAAS-MESFETS [J].
YOKOYAMA, K ;
TOMIZAWA, M ;
TAKADA, T ;
YOSHII, A .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (06) :719-722
[7]   ACCURATE MODELING FOR SUBMICROMETER-GATE SI AND GAAS-MESFETS USING TWO-DIMENSIONAL PARTICLE SIMULATION [J].
YOSHII, A ;
TOMIZAWA, M ;
YOKOYAMA, K .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (10) :1376-1380
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