MEASUREMENT OF DIFFUSED SEMICONDUCTOR SURFACE CONCENTRATIINS BY INFRARED PLASMA REFLECTION

被引：35

作者：

GARDNER, EE

KAPPALLO, W

GORDON, CR

机构：

来源：

APPLIED PHYSICS LETTERS | 1966年 / 9卷 / 12期

关键词：

D O I：

10.1063/1.1754642

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：432 / &

共 10 条

[1] QUANTITATIVE MEASUREMENT OF SEMICONDUCTOR HOMOGENEITY FROM PLASMA EDGE [J].

EDWARDS, DF ;

MAKER, PD .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (08) :2466-&

[2]

GARDNER EE, 1965, ELECTROCHEM SOC MTG

[3] DETERMINATION OF FREE ELECTRON EFFECTIVE MASS OF N-TYPE SILICON [J].

HOWARTH, LE ;

GILBERT, JF .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (01) :236-&

[4] DIFFUSANT IMPURITY-CONCENTRATION PROFILES IN THIN LAYERS ON SILICON [J].

ILES, PA ;

LEIBENHAUT, B .

SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :331-&

[5] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

IRVIN, JC .

BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+

[6] A NONDESTRUCTIVE MEASUREMENT OF CARRIER CONCENTRATION IN HEAVILY DOPED SEMICONDUCTING MATERIALS AND ITS APPLICATION TO THIN SURFACE LAYERS [J].

KUDMAN, I .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) :1826-&

[7]

LYDEN HA, 1964, PHYS REV, V134, P1106

[8] INFRARED ABSORPTION AND ELECTRON EFFECTIVE MASS IN N-TYPE GALLIUM ARSENIDE [J].

SPITZER, WG ;

WHELAN, JM .

PHYSICAL REVIEW, 1959, 114 (01) :59-63

[9] DETERMINATION OF OPTICAL CONSTANTS AND CARRIER EFFECTIVE MASS OF SEMICONDUCTORS [J].

SPITZER, WG ;

FAN, HY .

PHYSICAL REVIEW, 1957, 106 (05) :882-890

[10] DETAILED ANALYSIS OF THIN PHOSPHORUS-DIFFUSED LAYERS IN PARA-TYPE SILICON [J].

TANNENBAUM, E .

SOLID-STATE ELECTRONICS, 1961, 2 (2-3) :123-132

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