PREPARATION AND PROPERTIES OF MICROCRYSTALLINE SILICON FILMS USING PHOTOCHEMICAL VAPOR-DEPOSITION

被引：30

作者：

SAITOH, T ^{[1
]}

SHIMADA, T ^{[1
]}

MIGITAKA, M ^{[1
]}

TARUI, Y ^{[1
]}

机构：

[1] TOKYO UNIV AGR & TECHNOL, FAC TECHNOL, KOGANEI, TOKYO 184, JAPAN

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1983年 / 59-6卷 / DEC期

关键词：

D O I：

10.1016/0022-3093(83)90271-5

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：715 / 718

页数：4

共 8 条

[1]

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[3] SILICON THIN-FILM FORMATION BY DIRECT PHOTOCHEMICAL DECOMPOSITION OF DISILANE [J].

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OSAKA, Y ;

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[4]

OKABE H, 1978, PHOTOCHEMISTRY SMALL, P144

[5]

PETERS JW, 1982, SPR EL SOC M, P324

[6] OPTICAL AND ELECTRICAL-PROPERTIES OF AMORPHOUS-SILICON FILMS PREPARED BY PHOTOCHEMICAL VAPOR-DEPOSITION [J].

SAITOH, T ;

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SHIMADA, T ;

MIGITAKA, M .

APPLIED PHYSICS LETTERS, 1983, 42 (08) :678-679

[7]

SAITOH T, 1983, JPN J APPL PHYS S, V22, P617

[8] PROPERTIES OF HEAVILY DOPED GD-SI WITH LOW RESISTIVITY [J].

USUI, S ;

KIKUCHI, M .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 34 (01) :1-1

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