REACTIVE AND CHEMICALLY ASSISTED ION-BEAM ETCHING OF SI AND SIO2

被引：7

作者：

CARTER, MA

GOLDSPINK, GF

机构：

[1] Middlesex Polytechnic, London, Engl, Middlesex Polytechnic, London, Engl

来源：

VACUUM | 1988年 / 38卷 / 01期

关键词：

D O I：

10.1016/0042-207X(88)90248-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5 / 10

页数：6

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