DOUBLE-BARREL III-V-COMPOUND VAPOR-PHASE EPITAXY SYSTEMS

被引：0
作者：
OLSEN, GH
ZAMEROWSKI, TJ
机构：
来源：
RCA REVIEW | 1983年 / 44卷 / 02期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：270 / 286
页数：17
相关论文
共 20 条
[1]  
ABRAHAMS MS, COMMUNICATION
[2]  
BEUCHET G, 1980, 1980 P NATO C INP, P303
[3]  
BLAKESLEE AE, 1970 P S GAAS LOND, P283
[4]  
Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9
[5]   ROOM-TEMPERATURE LASER OPERATION OF QUANTUM-WELL GA(1-X)ALXAS-GAAS LASER-DIODES GROWN BY ORGANOMETALLUIC CHEMICAL VAPOR-DEPOSITION [J].
DUPUIS, RD ;
DAPKUS, PD ;
HOLONYAK, N ;
REZEK, EA ;
CHIN, R .
APPLIED PHYSICS LETTERS, 1978, 32 (05) :295-297
[6]  
ENSTROM RE, 1970, 3RD P INT S GALL ARS, P30
[7]  
FAIRMAN RD, 1977, I PHYS C SERIES B, V33, P45
[8]   EVAPORATION OF GAAS UNDER EQUILIBRIUM AND NONEQUILIBRIUM CONDITIONS USING A MODULATED BEAM TECHNIQUE [J].
FOXON, CT ;
HARVEY, JA ;
JOYCE, BA .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (10) :1693-&
[9]   QUANTUM-WELL HETEROSTRUCTURE LASERS [J].
HOLONYAK, N ;
KOLBAS, RM ;
DUPUIS, RD ;
DAPKUS, PD .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :170-186
[10]   VAPOR-PHASE GROWTH OF INGAASP-INP DH STRUCTURES BY THE DUAL-GROWTH-CHAMBER METHOD [J].
MIZUTANI, T ;
YOSHIDA, M ;
USUI, A ;
WATANABE, H ;
YUASA, T ;
HAYASHI, I .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (02) :L113-L116
12